View HAF2002_4238923.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HAF2002
Silicon N Channel MOS FET Series Power Switching
REJ03G1135-0300 (Previous: ADE-208-503A) Rev.3.00 Sep 07, 2005
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
* * * * Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G Temperature Sensing Circuit 12 3
Gate resistor Latch Circuit Gate Shutdown Circuit 1. Gate 2. Drain 3. Source
S
Rev.3.00 Sep 07, 2005 page 1 of 8
HAF2002
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Ta = 25C Symbol VDSS VGSS VGSS ID Note 1 ID (pulse) IDR Note 2 Pch Tch Tstg Value 60 16 -2.8 20 40 20 30 150 -55 to +150 Unit V V V A A A W C C
Typical Operation Characteristics
Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min 3.5 -- -- -- -- -- -- -- 3.5 Typ -- -- -- -- -- 0.8 0.35 175 -- Max -- 1.2 100 50 1 -- -- -- 13 Unit V V A A A mA mA C V Test Conditions
Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature
Rev.3.00 Sep 07, 2005 page 2 of 8
HAF2002
Electrical Characteristics
(Ta = 25C)
Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time
Note4
Min 10 -- 60 16 -2.8 -- -- -- -- -- -- -- 1.0 -- -- 6 -- -- -- -- -- -- -- -- --
Typ -- -- -- -- -- -- -- -- -- 0.8 0.35 -- -- 50 30 12 630 7.5 29 34 26 1.0 110 1.8 0.7
Max -- 10 -- -- -- 100 50 1 -100 -- -- 250 2.25 65 43 -- -- -- -- -- -- -- -- -- --
Unit A mA V V V A A A A mA mA A V m m S pF s s s s V ns ms ms
Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = -2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 4 V Note 3 ID = 10 A, VGS = 10 V ID = 10 A, VDS = 10 V VDS = 10 V, VGS = 0 f = 1 MHz ID = 5 A VGS = 5 V RL = 6 IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/dt = 50 A/s VGS = 5 V, VDD = 12 V VGS = 5 V, VDD = 24 V
Note 3 Note 3
IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss td (on) tr td (off) tf VDF trr tos1 tos2
Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.3.00 Sep 07, 2005 page 3 of 8
HAF2002
Main Characteristics
Power vs. Temperature Derating
40 500
Maximum Safe Operation Area
Thermal shut down 200 Operation area
Pch (W)
ID (A)
30
100 50 20 10 5
20 s
Channel Dissipation
10
DC
Drain Current
20
10
0 0
50
100
150
200
at s ion Operation in (T 2 this area is c= 25 1 limited by RDS (on) C ) 0.5 Ta = 25C 0.3 0.3 0.5 1 2 5 10 20
Op
PW
er
1
0
s
m
=
s
10
m
50 100
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 10 V 8V 6V 50 Pulse Test
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
40
5V 30 4V 3.5 V VGS = 3 V
ID (A)
40 Tc = -25C 25C 75C
30
Drain Current
Drain Current
10
20
20
10
10
0 0
2
4
6
8
0
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
VDS (on) (V)
Drain to Source on State Resistance RDS (on) ()
2.0 Pulse Test 1.6
0.5 Pulse Test 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 1 2 5 10 20 50 100 200
Drain to Source Voltage
1.2
0.8
ID = 20 A 10 A 5A
0.4
0 0 2 4 6 8 10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 8
HAF2002
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S)
0.10 Pulse Test ID = 20 A VGS = 4 V 0.06 5A 10 A 100 50
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
VDS = 10 V Pulse Test
0.08
20 10 5
Tc = -25C 25C 75C
0.04 5 A, 10 A 10 V
ID = 20 A
0.02
2 1 0.5
0 -40
0
40
80
120
160
1
2
5
10
20
50
Case Temperature
Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns)
1000 500 100 50
Switching Characteristics
td(off) tf
Switching Time t (ns)
200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25C 1 2 5 10 20 50
20 tr 10 5 td(on)
20 10 0.5
2 1 0.1 0.2
VGS = 5 V, VDD = 30 V PW = 300 s, duty 1 % 0.5 1 2 5 10 20 50
Reverse Drain Current
IDR (A)
Drain Current
ID (A)
Reverse Drain Current vs. Source to Drain Voltage
50 10000 Pulse Test 3000 1000
Typical Capacitance vs. Drain to Source Voltage
Reverse Drain Current IDR (A)
30 VGS = 5 V 20 0V
Capacitance C (pF)
40
Coss 300 100 30 10
10
VGS = 0 f = 1 MHz 0 10 20 30 40 50
0 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Drain to Source Voltage VDS (V)
Rev.3.00 Sep 07, 2005 page 5 of 8
HAF2002
Gate to Source Voltage vs. Shutdown Time of Load-Short Test
VGS (V)
10 VDD = 36 V 24 V 12 V 9V
Shutdown Case Temperature vs. Gate to Source Voltage
Shutdown Case Temperature Tc (C)
200 ID = 5 A
8
180
Gate to Source Voltage
6
160
4
140
2
120
0 0.1 0.2 0.5 1
100 0 2 4 6 8 10
2
5 10 20
50 100
Shutdown Time of Load-Short Test PW (ms) TTL Drive Characteristics
10 ID = 5 A
Gate to Source Voltage
VGS (V)
1.0
Input Voltage VI (V)
8
0.8
6 VI 4 II
0.6
0.4
2
0.2
0 0.01 0.03
0 0.1 0.3 1 3 10
Gate Series Resistance RG (k) Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 lse t pu sho 1
ch - c (t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T D= PW T
0.001 10
100
1m
10 m
100 m
Input Current II (mA)
1
10
Pulse Width PW (S)
Rev.3.00 Sep 07, 2005 page 6 of 8
HAF2002
Test Circuit
RL ID 0 + - VCC =5V II D.U.T 0 VI 0 II VI
5A
Rg HD74LS08
Thermal shut down
Switching Time Test Circuit
Waveform
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 5V
50
VDD = 30 V td(on)
90% tr
90% td(off) tf
Rev.3.00 Sep 07, 2005 page 7 of 8
HAF2002
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AD-A
Package Name TO-220FM / TO-220FMV
MASS[Typ.] 1.8g
Unit: mm
10.0 0.3 7.0 0.3 3.2 0.2
2.8 0.2 2.5 0.2
0.6
5.0 0.3
2.0 0.3
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3 2.5
0.7 0.1 2.54 0.5 2.54 0.5
0.5 0.1
Ordering Information
Part Name Quantity Shipping Container HAF2002-90 Max: 50 pcs/sack Sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Sep 07, 2005 page 8 of 8
14.0 1.0
17.0 0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

▲Up To Search▲

Price & Availability of HAF2002

	To Download HAF2002 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .